Apparatus for producing thin oxide film


PURPOSE: To obtain a thin oxide film which has no crystal defects and has the density approximate to a bulk value by depositing a thin film on a substrate by molecular beam vapor deposition in a high vacuum and setting O + or O 2 + at specific energy, then projecting the same to the deposited film on the substrate. CONSTITUTION: This apparatus for producing the thin oxide film has a substrate holder 2 for heating the substrate 3 provided in a film forming chamber 11 and molecular beam vapor deposition sources 8, 8', 9 for evaporating the material deposited on the substrate 3 by the molecular beams and is constituted in the following manner. An ionization chamber 10 for forming plasma and drawing out oxygen ions at 10W50kev energy from said plasma, a mass separator 13 for separating only the O + or O 2 + ions from the oxygen ions from the chamber 10 and a decelerating electrode 12 for decelerating the above-mentioned oxygen ions to 10W200ev are provided to the above-mentioned apparatus. The decelerated oxygen ions are projected simultaneously with the vapor deposition to the thin film deposited on the substrate 3 under the high vacuum. COPYRIGHT: (C)1988,JPO&Japio




Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)


Cited By (4)

    Publication numberPublication dateAssigneeTitle
    JP-2011195348-AOctober 06, 2011Yukio Watabe, 行男 渡部酸化物強誘電体の分極電場の増大法
    JP-2012025996-AFebruary 09, 2012Mes Afty Corp, エム・イー・エス・アフティ株式会社透明導電性薄膜の形成方法および透明導電性薄膜の形成装置
    JP-H03138353-AJune 12, 1991Kokusai Chiyoudendou Sangyo Gijutsu Kenkyu Center, Nec Corp, Nippon Steel Corp, Sanyo Electric Co Ltd, Sharp CorpProduction of thin oxide film
    JP-H05263238-AOctober 12, 1993Hitachi Ltd, 株式会社日立製作所ロードロック式真空処理装置